Dielectric Properties of Ultrathin CaF(2)Ionic Crystals

Wen, C; Banshchikov, AG; Illarionov, YY; Frammelsberger, W; Knobloch, T; Hui, F; Sokolov, NS; Grasser, T; Lanza, M

Lanza, M (corresponding author), Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat, 199 Ren Ai Rd, Suzhou 215123, Peoples R China.

ADVANCED MATERIALS, 2020; 32 (34):

Abstract

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition m......

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