Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector

Zhang, D; Lin, WM; Lin, ZG; Jia, LM; Zheng, W; Huang, F

Zheng, W (corresponding author), Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Mat, Guangzhou 510275, Peoples R China.

APPLIED PHYSICS LETTERS, 2021; 118 (21):

Abstract

Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5-5.9eV, has been proposed as a potential material for a high- perfo......

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