Modeling the ELDRS effects in hydrogen-rich a-SiO2 of a specific designed GLPNP bipolar transistor

Liu, Y; Zhang, GH; Zhou, H; Zuo, X; Song, Y; Zhang, Y

Zhang, Y (corresponding author), China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China.; Zhang, Y (corresponding author), China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China.

EUROPEAN PHYSICAL JOURNAL PLUS, 2021; 136 (6):

Abstract

Gamma irradiation experiments are made on a kind of gate lateral PNP transistors with dose rates from 10 rad/s to 0.167 mrad/s. We measured the concen......

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