Role of thin Ti layer in formation mechanism of low temperature-annealed Ti/Al-based ohmic contact on AlGaN/GaN heterostructure

Yoshida, T; Egawa, T

Yoshida, T (reprint author), Nagoya Inst Technol, Res Ctr Nanodevices & Adv Mat, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan.; Yoshida, T (reprint author), Tokai Rika Co Ltd, Toyota 3-260, Oguchi, Aichi 4800195, Japan.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018; 33 (7):

Abstract

To obtain Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures with a low resistance, it is crucial to understand their formation mechanism. Such ......

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