Gate Dielectric Breakdown in A-InGaZnO Thin Film Transistors With Cu Electrodes

Tai, MC; Wang, YX; Chang, TC; Huang, HC; Lin, CC; Huang, BS; Chang, HY; Huang, JW; Sze, S

Chang, TC (corresponding author), Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.; Huang, JW (corresponding author), Republ China Mil Acad, Dept Phys, Kaohsiung 83059, Taiwan.

IEEE ELECTRON DEVICE LETTERS, 2021; 42 (6): 851

Abstract

In this work, the impact of positive bias stress (PBS) on an all copper(Cu)-electrode a-InGaZnO TFT is discussed. Commonly, Cu diffusion from the sour......

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