A 600 V high voltage gate driver IC with excellent allowable negative V-S bias capability for E-mode GaN power devices

Lu, YY; Zhu, J; Hu, KS; Yu, SY; Yan, D; Cheng, CY; Luo, C; Zhang, YW; Sun, WF

Sun, WF (corresponding author), Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Peoples R China.

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2020; 104 (1): 27

Abstract

In this paper, a 600 V high voltage gate driver IC with excellent allowable negative V-S bias capability is proposed. In order to prevent the bootstra......

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