Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs

Chen, JW; Liu, JB; Zou, WS; Ma, J

Ma, J (通讯作者),Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China.

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023; 70 (12): 6691

Abstract

In this work, we report human-body-model (HBM) and transmission-line-pulse (TLP) electronic static discharge (ESD) within lateral GaN-on-Si schottky b......

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