Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz

Hamzeloui, S; Arabhavi, AM; Ciabattini, F; Ebrahimi, M; Müller, M; Ostinelli, O; Schröter, M; Bolognesi, CR

Bolognesi, CR (通讯作者)，Swiss Fed Inst Technol, Millimeter Wave Elect MWE Grp, Zurich, Switzerland.

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023; (): 145

Abstract

We report the first DC, RF, and W-band largesignal power performance of multi-finger 250-nm InP/GaAsSb DHBTs for power amplifier applications at mm- a......

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