Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications-MedSci.cn

Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications

Kaneriya, RK; Karmakar, C; Rastogi, G; Patel, MR; Upadhyay, RB; Kumar, P; Bhattacharya, AN

Kaneriya, RK (通讯作者)，ISRO, Space Applicat Ctr, Microelect Grp, Ahmadabad, India.;Kaneriya, RK (通讯作者)，Indian Inst Space Sci & Technol, Dept Phys, Thiruvananthapuram, India.