N-polar GaN evolution on nominally on-axis c-plane sapphire by MOCVD-I: Growth-MedSci.cn

N-polar GaN evolution on nominally on-axis c-plane sapphire by MOCVD-I: Growth

Yaddanapudi, K; Saha, S; Muraleedharan, K; Banerjee, D

Yaddanapudi, K (通讯作者)，Univ Calif Davis, Dept Mat Sci & Engn, Davis, CA 95616 USA.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2022; 286 ():

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