A Visible Light Modulated Resistive Switching Memory Behaviors in the Ta/BiFeO3/Carbon/BaTiO3/Si Device

Li, XL; Li, XP; Chen, P

Chen, P (corresponding author), Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China.

JOURNAL OF ELECTRONIC MATERIALS, 2021; 50 (7): 3972

Abstract

A bipolar resistance switching memory effect is observed in the Ta/BiFeO3/carbon/BaTiO3/Si structure. The resistance switching (RS) behavior can be mo......

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