Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

Zhang, L; Zheng, ZY; Yang, S; Song, WJ; Feng, SR; Chen, KJ

Chen, KJ (corresponding author), Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Clear Water Bay, Hong Kong, Peoples R China.

APPLIED PHYSICS LETTERS, 2021; 119 (5):

Abstract

The surface of the p-GaN layer in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) can be reinforced with enhanced immunity to hot ......

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