Electrical characterization of ALD HfO2 high-k dielectrics on ((2)over-bar01) beta-Ga2O3

Shahin, DI; Tadjer, MJ; Wheeler, VD; Koehler, AD; Anderson, TJ; Eddy, CR; Christou, A

Shahin, DI (reprint author), Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA.; Tadjer, MJ (reprint author), US Naval Res Lab, Washington, DC 20375 USA.

APPLIED PHYSICS LETTERS, 2018; 112 (4):

Abstract

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 degrees C on n-type ((2) over bar 01) beta-Ga2O3 has been s......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索