Analysis of Capacitance-Frequency (C-V-F) and Conductance-Frequency (G-V-F) Characteristics of a-Si:H/c-Si Heterojunction

Bouziane, N; Tizi, S; Zebentout, B; Djemai, R; El Ghoul, N; Khirouni, K

Bouziane, N (reprint author), Univ Djillali Liabes Sidi Bel Abbes, Appl Microelect Lab, Fac Elect Engn, Elect Dept, Sidi Bel Abbes 22000, Algeria.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018; 13 (5): 661

Abstract

For the study structures, the effect of B2H6 and H-2 gases during the deposition of a-Si:H layers by PECVD technique has been clearly identified on th......

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