1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer-MedSci.cn

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

He, W; Li, J; Liao, ZL; Lin, F; Wu, JY; Wang, B; Wang, MJ; Liu, N; Chiu, HC; Kuo, HC; Lin, XN; Li, JB; Liu, XK

Liu, XK (通讯作者)，Shenzhen Univ, Coll Mat Sci & Engn, Coll Elect & Informat Engn, Coll Phys & Optoelect Engn,Inst Microelect IME, Shenzhen 518060, Peoples R China.