Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique

Li, MJ; Wang, JY; Zhang, B; Tao, QQ; Wang, HY; Cao, QR; Huang, CY; Liu, JQ; Mo, JH; Wu, WG; Cai, SJ

Wang, JY (corresponding author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

SOLID-STATE ELECTRONICS, 2021; 177 ():

Abstract

The thermal-oxidation/wet-etching gate-recess mask using low-pressure-chemical-vapor-deposition (LPCVD) SiN/atomic-layer-deposition (ALD) AlN combined......

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