Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Borg, M; Gignac, L; Bruley, J; Malmgren, A; Sant, S; Convertino, C; Rossell, MD; Sousa, M; Breslin, C; Riel, H; Moselund, KE; Schmid, H

Borg, M (reprint author), Lund Univ, Elect & Informat Technol, Box 118, S-22100 Lund, Sweden.; Borg, M (reprint author), Lund Univ, NanoLund, Box 118, SE-22100 Lund, Sweden.

NANOTECHNOLOGY, 2019; 30 (8):

Abstract

InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and......

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