Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications

Birla, S

Birla, S (reprint author), Manipal Univ, Dept Elect & Commun Engn, Jaipur, Rajasthan, India.

INTERNATIONAL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS, 2019; 65 (4): 603

Abstract

In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access t......

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