Topological Attributes of Silicon Carbide SiC4-II[i,j] Based on Ve-Degree and Ev-Degree-MedSci.cn

Topological Attributes of Silicon Carbide SiC4-II[i,j] Based on Ve-Degree and Ev-Degree

Mahboob, A; Alrowaili, D; Alam, SM; Ali, R; Rasheed, MW; Siddique, I

Siddique, I (通讯作者)，Univ Management & Technol, Dept Math, Lahore 54770, Pakistan.

JOURNAL OF CHEMISTRY, 2022; 2022 ():

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