Nanomechanical topological insulators with an auxiliary orbital degree of freedom

Ma, JW; Xi, X; Li, Y; Sun, XK

Sun, XK (corresponding author), Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China.

NATURE NANOTECHNOLOGY, 2021; 16 (5):

Abstract

Topological insulators possess edge states protected from disorder and can be realized in real materials as well as in synthetic materials based on op......

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