Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters

Zhang, Z; Guo, Y; Robertson, J

Robertson, J (corresponding author), Univ Cambridge, Engn Dept, Cambridge CB2 1PZ, England.

SOLID-STATE ELECTRONICS, 2021; 183 ():

Abstract

We describe a detailed atomic model of the SiC/SiO2 interface states due to carbon clusters which lower the field effect mobility of SiC below its Hal......

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