High-k, Higher-k and Ferroelectric HfO2

Toriumi, A

Toriumi, A (reprint author), Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan.

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR, 2017; 80 (1): 29

Abstract

We would like to look back on our way, and discuss the origin of versatile properties of HfO2. The dielectric constant is important in high-k technolo......

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