Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure-MedSci.cn

Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure

Miyata, A; Hoshii, T; Wakabayashi, H; Tsutsui, K; Kakushima, K

Miyata, A (通讯作者)，Tokyo Inst Technol, Yokohama, Kanagawa 2268503, Japan.

JAPANESE JOURNAL OF APPLIED PHYSICS, 2022; 61 (SH):

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