Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN-MedSci.cn

Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN

Akazawa, M; Murai, S; Kachi, T

Akazawa, M (通讯作者)，Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0600813, Japan.

JOURNAL OF ELECTRONIC MATERIALS, 2022; 51 (4): 1731

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