Modified ITAT Model for Data Retention in Nanocrystals Based Flash Memory Gate Stack

Dhavse, R; Prashant, K; Dabhi, C; Darji, A; Patrikar, RM

Dhavse, R (reprint author), SVNIT, Dept Elect Engn, Surat 395007, India.

JOURNAL OF NANO RESEARCH, 2017; 45 ( ): 1

Abstract

This work applies combination of Direct Tunneling model and BSIM4 based ITAT model to explain the leakage of electrons from charged nanocrystals to p-......

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