Low-Fluence Neutron Irradiation Effects on AlGaN/GaN HEMTs

Cui, X; Ji, KY; Zhang, TP; Wang, BJ; Sha, W; Dong, ZL; Shi, YH; Jiang, CS; Hua, QL; Hu, WG

Hua, QL; Hu, WG (通讯作者)，Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Ctr Excellence Nanosci, Beijing Key Lab Micronano Energy & Sensor, Beijing 101400, Peoples R China.;Hua, QL; Hu, WG (通讯作者)，Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China.;Hu, WG (通讯作者)，Guangxi Univ, Ctr Nanoenergy Res, Sch Phys Sci & Technol, Nanning 530004, Peoples R China.;Jiang, CS (通讯作者)，Guangxi Normal Univ, Sch Elect & Informat Engn, Guilin 541004, Peoples R China.

ADVANCED MATERIALS TECHNOLOGIES, 2023; 8 (6):

Abstract

AlGaN/GaN-based high electron mobility transistors (HEMTs) are ideal candidates for power electronics in consumer, industrial, and space applications.......

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