A Ka-band 23dBm power amplifier based on 4-way parallel-series power combiner with loaded capacitors in 65-nm CMOS

Li, YJ; Duan, ZM; Lv, AW; Li, X; Dai, YF; Sun, LG

Duan, ZM (corresponding author), East China Res Inst Elect Engn, Hefei 230031, Peoples R China.

IEICE ELECTRONICS EXPRESS, 2021; 18 (11):

Abstract

This paper presents a Ka-band 4-way combining power amplifier (PA) implemented in 65 nm CMOS process. A T-type power combiner with loaded capacitors i......

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