Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device

He, X; He, B; Yu, H; Sun, ZG; He, J; Zhao, WY

Sun, ZG (reprint author), Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China.

JOURNAL OF APPLIED PHYSICS, 2019; 125 (22):

Abstract

Nonmagnetic semiconductor based magnetoresistance (MR) devices combining high performance and low cost have attracted a lot of attention. However, it ......

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