Synthesis and annealing process of ultra-large SnS nanosheets for FTO/SnS/CdS/Pt photocathode

Wu, CS; Yao, KF; Guan, YS; Ali, OA; Gao, M; Huang, J; Lai, JM; Shi, WZ; Hu, GJ; Wang, LJ; Shen, Y

Gao, M (reprint author), Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China.; Hu, GJ (reprint author), Shanghai Normal Univ, Coll Math & Sci, Dept Phys, Shanghai, Peoples R China.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019; 93 (): 208

Abstract

SnS has been widely used in photoelectric devices due to its special band gap of 1.2-1.5 eV. Here, we reported on the fabrication of SnS nanosheets an......

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