Deep neural network-based approach for breakdown voltage and specific on-resistance prediction of SOI LDMOS with field plate

Chen, J; Guo, XB; Guo, YF; Zhang, J; Zhang, ML; Yao, Q; Yao, JF

Guo, YF (corresponding author), Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China.; Guo, YF (corresponding author), Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Jiangsu, Peoples R China.; Guo, YF (corresponding author), Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropa, Nanjing 210023, Peoples R China.

JAPANESE JOURNAL OF APPLIED PHYSICS, 2021; 60 (7):

Abstract

Breakdown voltage (BV) and specific on-resistance (R (on,sp)), are critical indicators to measure the quality of the power device. To improve the devi......

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