Linear Analysis of High-Frequency Field-Effect Transistors Using the CN-FDTD Method

Asadi, S; Honarbakhsh, B

Asadi, S (reprint author), Shahid Beheshti Univ, Dept Elect Engn, Tehran 1983969411, Iran.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017; 65 (6): 1946

Abstract

The Crank-Nicolson finite-difference time-domain (CN-FDTD) method is used for the linear analysis of a field-effect transistor (FET) based on the dist......

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