Effect of Using High-Pressure Gas Atmosphere with UV Photocatalysis on the CMP Characteristics of a 4H-SiC Substrate

Yin, T; Zhao, PP; Doi, T; Kurokawa, S; Jiang, JY

Yin, T (corresponding author), Quzhou Univ, Coll Mech Engn, Quzhou 324000, Peoples R China.; Yin, T (corresponding author), Kyushu Univ, Dept Mech Engn, Precis Machining Technol Lab, Fukuoka 8190395, Japan.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021; 10 (2):

Abstract

The objective of this study was to realize high-efficiency and high-quality chemical mechanical polishing (CMP) of a silicon carbide (SiC) substrate. ......

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