Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETs

Wolf, M; Hilt, O; Wurfl, J

Wolf, M (reprint author), Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, Power Elect Dept, D-12489 Berlin, Germany.

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018; 65 (9): 3878

Abstract

The design and gate-control management of monolithically integrated bidirectional normally OFF GaN-HFET-based switches are presented. Unidirectional 6......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索