Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source

Ye, SZ; Wang, ZF; Wang, H; Huang, QJ; He, J; Chang, S

Chang, S (corresponding author), Wuhan Univ, Sch Phys & Technol, Dept Micro Elect, Wuhan 430072, Peoples R China.

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (8): 4123

Abstract

Steep-slope switching is effective to reduce the required energy for switching, however, at least 60 mV of gate voltage is required to modulate the cu......

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