Reaction-limited graphene CVD surpasses silicon production rate

Chin, HT; Nguyen, HT; Chen, SH; Chen, YF; Chen, WH; Chou, ZY; Chu, YH; Yen, ZL; Ting, CC; Hofmann, M; Hsieh, YP

Hsieh, YP (corresponding author), Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan.; Hsieh, YP (corresponding author), Natl Taiwan Univ, Int Grad Program Mol Sci & Technol, Taipei 10617, Taiwan.; Hsieh, YP (corresponding author), Natl Chung Cheng Univ, Grad Inst Optomechatron, Chiayi 62102, Taiwan.

2D MATERIALS, 2021; 8 (3):

Abstract

2D materials are considered enabling constituents in future large-scale electronics, but current production by chemical vapor deposition (CVD) proceed......

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