High-performance Electrostatic Discharge Protection Device for Power Chip Based on 28 nm Process-MedSci.cn

High-performance Electrostatic Discharge Protection Device for Power Chip Based on 28 nm Process

Zhao, DY; Guo, W; Wang, YB; Shao, J; Li, JR; Fu, Z; Liu, F; Pang, ZJ; Zhao, WL; Wang, LC; Wang, SL

Wang, SL (通讯作者)，Xidian Univ, Microelect Sch, 2 Taibai South Rd, Xian 71000, Shaanxi, Peoples R China.

SENSORS AND MATERIALS, 2022; 34 (5): 1813

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