Advantages of InGaN-GaN-InGaN Delta Barriers for InGaN-Based Laser Diodes

Cheng, LW; Li, ZW; Zhang, JY; Lin, XY; Yang, D; Chen, HT; Wu, SD; Yao, S

Cheng, LW (corresponding author), Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China.

NANOMATERIALS, 2021; 11 (8):

Abstract

An InGaN laser diode with InGaN-GaN-InGaN delta barriers was designed and investigated numerically. The laser power-current-voltage performance curves......

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