Ferroelectric-Nanocrack Switches for Memory and Complementary Logic with Zero Off-current and Low Operating Voltage

Guo, Z; Guan, YD; Luo, Q; Hong, JM; You, L

You, L (corresponding author), Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.; You, L (corresponding author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

ADVANCED ELECTRONIC MATERIALS, 2021; 7 (6):

Abstract

Ferroelectric devices have attracted intensive research in memory and logic applications due to their non-volatility, scalability, and energy efficien......

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