600-V shielded trench split-gate VDMOS improving the figure of merit

Chen, XP; Feng, QY; Jin, T

Feng, QY (reprint author), Southwest Jiaotong Univ, Sch Informat Sci & Technol, Inst Microelect, Chengdu 611756, Sichuan, Peoples R China.

INTERNATIONAL JOURNAL OF ELECTRONICS, 0; ():

Abstract

A shielded trench split-gate vertical double-diffused metal-oxide-semiconductor field-effect transistor (ST-SG-VDMOS) is proposed, and the analytical ......

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