期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (6)
In this work, the impact of positive bias stress (PBS) on an all copper(Cu)-electrode a-InGaZnO TFT is discussed. Commonly, Cu diffusion from the sour......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (2)
In this letter, we propose a 3D spintronic device stacked by ferrimagnetic (FIM) alloy CoTb layers with a thickness gradient for realizing multi-bit s......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (5)
In this study, an oscillating neuron based on the Pt/ NbOx / TiN device with high performance was demonstrated. The temperature dependence of NbO2 thr......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (8)
Cephalopods can swiftly merge into the surroundings by changing their skin color even without the involvement of brains. Inspired by this ability, we ......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (6)
Resonant cantilever based on piezoelectric materials is one of the most promising platforms for real-time humidity sensing. In this letter, we propose......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (7)
P-type tinmonoxide (SnO) thin-film phototransistors were developed with high photoresponsivity of 2.94 x 10(5) A/W and high detectivity of 1.82 x 10(1......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (8)
A 60-GHz compact dual-mode on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism o......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (2)
A semi-analytic numerical algorithm for general pillbox windows, named the pillbox window mode-matching algorithm (PWMMA), is proposed in this letter.......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (6)
This work demonstrates multi-channel AlGaN/GaN Schottky barrier diodes (SBDs) with a breakdown voltage (BV) over 10 kV, the highest BV reported in GaN......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (2)
In this work, the interaction between hydrogen poisoning (HP) and bias stress in AlGaN/GaN MIS-HEMTs, which incorporate a SiNx gate dielectric, is inv......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (2)
This work reports a method to reduce the process thermal budget in metal oxide (MO) thin-film transistors (TFTs). Using the thermal curing of a fluori......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (5)
Based on Microscopic hyperspectral imaging (mu-HSI) technique, a measurement technique is proposed to precisely determine two-dimensional (2D) pixel- ......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (6)
In this letter, the electronic transport features of layered two-dimensional (2D) Bi-2 O-2 Se semiconductor nanosheets are characterized along the in-......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (7)
Artificial perception system is expected to perceive and integrate a large amount of sensory data to dynamically train inspired neural networks. It is......
期刊： IEEE ELECTRON DEVICE LETTERS, 2021; 42 (9)
In this letter, sub-10-nm air channel devices were fabricated with the aid of photolithography and focused ion beam (FIB) etching. Field emission ( FE......
