Non-invasively improving the Schottky barrier of MoS2/metal contacts by inserting a SiC layer

Fang, QL; Zhao, XM; Yuan, L; Wang, BY; Xia, CJ; Ma, F

Xia, CJ (corresponding author), Xian Polytech Univ, Sch Sci, Xian 710048, Shaanxi, Peoples R China.; Ma, F (corresponding author), Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021; 23 (27): 14796

Abstract

The applications of two-dimensional (2D) materials in electronics, optoelectronics, and spintronics are limited by the high contact resistance at the ......

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