Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Li, JS; Chiang, CC; Xia, XY; Wan, HH; Ren, F; Pearton, SJ

Pearton, SJ (通讯作者)，Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32606 USA.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023; 41 (4):

Abstract

The effect of doping in the drift layer and the thickness and extent of extension beyond the cathode contact of a NiO bilayer in vertical NiO/beta-Ga2......

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