Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation

Nandi, U; Mohammadi, M; Lu, H; Norman, J; Gossard, AC; Alff, L; Preu, S

Nandi, U (corresponding author), Tech Univ Darmstadt, Dept Elect Engn & Informat Technol, D-64283 Darmstadt, Germany.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021; 39 (2):

Abstract

ErAs:In(Al)GaAs photoconductors have proven to be outstanding devices for photonic terahertz (0.1-10THz) generation and detection with previously repo......

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