A novel process for adjusting the gate-drain spacing in InP-HEMTs with

Zhu, MS; Xie, YY; Deng, JA; Chen, YF; Mei, CY

Chen, YF (corresponding author), FUDAN, Sch Informat Sci & Technol, Nanolithog & Applicat Res Grp, Shanghai 200082, Peoples R China.

MICROELECTRONIC ENGINEERING, 2021; 247 ():

Abstract

To enable mass production of InP-HEMTs operating in microwave and THz bands with T shaped gates as narrow as 30 nm, industry friendly processes for so......

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