期刊： MICROELECTRONIC ENGINEERING, 2021; 244 ()
A self-assembled 1H,1H,2H,2H-perfluorodecyltriethoxysilane (PFDS) film was prepared on a diamond tip scratched silicon surface, and presented stronger......
期刊： MICROELECTRONIC ENGINEERING, 2021; 239 ()
In this work, we propose a Schottky diode that uses Mo-C alloy as a Schottky metal to form a Schottky contact. Unlike existing diode designs based on ......
期刊： MICROELECTRONIC ENGINEERING, 2021; 247 ()
Localized electrochemical deposition (LECD) is a promising and economical three-dimensional (3D) microstructure fabrication method. As the current res......
期刊： MICROELECTRONIC ENGINEERING, 2021; 247 ()
To enable mass production of InP-HEMTs operating in microwave and THz bands with T shaped gates as narrow as 30 nm, industry friendly processes for so......
期刊： MICROELECTRONIC ENGINEERING, 2021; 247 ()
Grating plays an important role in many fields, so it is of great significance to develop a low-cost and rapid grating fabricating technology. In this......
期刊： MICROELECTRONIC ENGINEERING, 2021; 247 ()
In this work, the effects of heavy ion irradiation on atomic switches with Cu/Al2O3/Pt structure are investigated. The initial device is prone to hard......
期刊： MICROELECTRONIC ENGINEERING, 2021; 244 ()
The flexible piezoelectric nanogenerator (PNG) has been spotlighted as a promising candidate for sustainable power source in wireless portable device.......
期刊： MICROELECTRONIC ENGINEERING, 2021; 242 ()
The sensitive detection of polarization-states of ultraviolet (UV) light is enssential for many optoelectronic applications, such as UV communication ......
期刊： MICROELECTRONIC ENGINEERING, 2021; 244 ()
Through silicon via (TSV) is a promising interconnect technology in three-dimensional (3D) integration which has large packing density, improves effic......
期刊： MICROELECTRONIC ENGINEERING, 2021; 242 ()
The current ceramic/618 epoxy resin piezoelectric composite material is easily deformed due to temperature, which affects the performance of the trans......
期刊： MICROELECTRONIC ENGINEERING, 2021; 247 ()
The conventional monolithic integration of silicon PIN detector as Delta E-E telescope suffer from incompatibility with IC process, signal crosstalk, ......
期刊： MICROELECTRONIC ENGINEERING, 2021; 247 ()
In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (LG) to gate-drain distance (LGD......
期刊： MICROELECTRONIC ENGINEERING, 2021; 244 ()
A novel thermal oxidation method for growing a thin SiO2 layer is proposed for improving the Al2O3/4H-SiC-based MOS structure characteristics. The met......
期刊： MICROELECTRONIC ENGINEERING, 2021; 242 ()
We investigate the inductively coupled plasma (ICP) etching characteristics of (0002) Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al0.94Sc0.......
期刊： MICROELECTRONIC ENGINEERING, 2021; 247 ()
While the precision CNC milling method is widely used to fabricate relatively large sized folded waveguides (FWGs), especially W-band FWGs, UV-LIGA is......
