Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions

Chaudhary, P; Buragohain, P; Kozodaev, M; Zarubin, S; Mikheev, V; Chouprik, A; Lipatov, A; Sinitskii, A; Zenkevich, A; Gruverman, A

Gruverman, A (corresponding author), Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA.

APPLIED PHYSICS LETTERS, 2021; 118 (8):

Abstract

Pairing two-dimensional semiconductors with ferroelectric films may allow for the development of hybrid electronic devices that would not only exhibit......

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