Epitaxial growth of 3C-SiC film by microwave plasma chemical vapor deposition in H-2-CH4-SiH4 mixtures: Optical emission spectroscopy study

Yurov, VY; Ralchenko, VG; Martyanov, AK; Antonova, IA; Sedov, VS; Khomich, AA; Voronov, VV; Savin, SS; Shevchenko, MY; Bolshakov, AP

Yurov, VY (corresponding author), Russian Acad Sci, Prokhorov Gen Phys Inst, Vavilov Str 38, Moscow 119991, Russia.; Yurov, VY (corresponding author), Natl Res Nucl Univ MEPhI, 31 Kashirskoye Shosse, Moscow 115409, Russia.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021; 39 (2):

Abstract

Microwave (MW) plasma in silane-hydrogen and silane-hydrogen-methane mixtures is used effectively for chemical vapor deposition of Si, SiC, diamond, a......

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