Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf0.5Zr0.5O2 barrier

Jiao, PJ; Xi, ZN; Zhang, XY; Han, YJ; Wu, Y; Wu, D

Wu, D (corresponding author), Nanjing Univ, Dept Mat Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China.

APPLIED PHYSICS LETTERS, 2021; 118 (25):

Abstract

Ferroelectric Hf0.5Zr0.5O2 films, 5.8 nm in thickness, were deposited on Nb:SrTiO3 semiconductor substrates to form a Pt/Hf0.5Zr0.5O2/Nb:SrTiO3 metal/......

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