期刊： SOLID-STATE ELECTRONICS, 2021; 180 ()
In this paper, an Al/Ti Schottky-electrode was fabricated on a 4H- SiC surface via sputtering, and an Al2O3 layer was inserted into the metal semicond......
期刊： SOLID-STATE ELECTRONICS, 2021; 181 ()
The drain current of the amorphous InGaZnO thin-film transistors (TFTs) shows the Arrhenius and the nonArrhenius dependence at the high temperature an......
期刊： SOLID-STATE ELECTRONICS, 2021; 177 ()
The thermal-oxidation/wet-etching gate-recess mask using low-pressure-chemical-vapor-deposition (LPCVD) SiN/atomic-layer-deposition (ALD) AlN combined......
期刊： SOLID-STATE ELECTRONICS, 2021; 183 ()
Dual gated 2ML WS2 MOS Capacitors have been fabricated with capacitance values as high as 2.7uF/cm(2) (with single sheet charge centroid assumption fo......
期刊： SOLID-STATE ELECTRONICS, 2021; 178 ()
Dopants-dependent polarity transition of switching behaviors for HfOx:Cu-based RRAM were investigated. By inducing different concentrations of Cu dopa......
期刊： SOLID-STATE ELECTRONICS, 2021; 178 ()
A polycrystalline silicon vertical thin film transistor (VTFT) is fabricated, and the electrical parameters are extracted and compared with the typica......
期刊： SOLID-STATE ELECTRONICS, 2021; 178 ()
As an important part of three-dimensional (3D) magnetic sensors, the vertical Hall devices directly determine the overall performance of the sensors. ......
期刊： SOLID-STATE ELECTRONICS, 2021; 177 ()
We fabricated the Fe3O4/alkyl-sulfonic acid molecules hybrid nanoparticles by self-assembly monolayers (SAMs) in air and nitrogen ambience to investig......
期刊： SOLID-STATE ELECTRONICS, 2021; 180 ()
In this paper, we proposed an equivalent circuit of a cell device (high-voltage silicon diode), considering effects of temperature and reverse voltage......
期刊： SOLID-STATE ELECTRONICS, 2021; 183 ()
We describe a detailed atomic model of the SiC/SiO2 interface states due to carbon clusters which lower the field effect mobility of SiC below its Hal......
期刊： SOLID-STATE ELECTRONICS, 2021; 178 ()
When the AlGaN/GaN HEMT is working for a long time under the high-power and high-temperature conditions, the internal heat will reduce its reliability......
期刊： SOLID-STATE ELECTRONICS, 2021; 183 ()
In this work, we fabricated the transmission line model test structures of Ti/Al/Ni/Au Ohmic contact on the lattice-matched In0.17Al0.83 N/GaN heteros......
期刊： SOLID-STATE ELECTRONICS, 2021; 179 ()
We have investigated the exchange bias effect in La0.7Sr0.3MnO3/SrRuO3 bilayers that epitaxial grown in different directions and various substrates. A......
期刊： SOLID-STATE ELECTRONICS, 2021; 176 ()
Lead-free Ag-Bi-I rudorffite materials, such as Ag2BiI5, have gained ever-increasing attention as potential alternatives to lead halide perovskites fo......
期刊： SOLID-STATE ELECTRONICS, 2021; 175 ()
The built-in bipolar junction transistor of H-gate partially depleted SOI NMOS was characterized by measuring the common-emitter output curve and calc......
